(China (Mainland))
Product Summary
The SI4463BDY is a P-channel 2.5V MOSFET.
Parametrics
Absolute maximum ratings: (1)Source Voltage, VDS: -20V; (2)Gate-Source Voltage, VGS: ±12V; (3)Pulsed Drain Current, IDM: -50A; (4)Operating Junction and Storage Temperature Range, TJ, Tstg: -55 to 150℃.
Features
Static specifications: (1)Gate Threshold Voltage, VGS(th): -0.6 to -1.4V when VDS = VGS, ID = -250μA ; (2)Gate-Body Leakage, IGSS: ±100nA max when VDS = 0V, VGS = ±12V; (3)Forward Transconductance, gfs; 44S when VDS =-10V, ID =-13.7A ; (4)Diode Forward Voltagea, VSD: -0.7 to -1.1V when IS =-2.7A, VGS =0V .
Diagrams
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 Si4463BDY |
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Data Sheet |
Negotiable |
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SI4463BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 13.7A 0.011Ohm |
Data Sheet |
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SI4463BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 20V 13.7A 3.0W 11mohm @ 10V |
Data Sheet |
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